光电器件

Discrete semiconductor devices and integrated circuits - Part 5 - 1 : optoelectronic devices - General.

半导体分立器件和集成电路。第 5-1 部分： 光电器件。总则。

The structure and fabrication of double - insulation layer tunnel junction ( MIMIS ) are introduced.

介绍了一种新型光电器件，即双绝缘层 MIMIS 隧道发光器件的结构和制备。

Discrete semiconductor devices and integrated circuits - Part 5 - 2 : optoelectronic devices - Essential ratings and characteristics.

分立半导体器件和集成电路。第 5-2 部分： 光电器件。 基本额定值和特性。

We also prepared some photoelectric devices and explore the mechanisms of photovoltaic conversion and electroluminescence.

制备了光电器件，探讨了其光电转换、电致发光等方面的机理。

It is important of applications of low band gap polymers to properties of their photoelectric devices.

低能带隙聚合物对光电器件具有重要的意义。