砷化镓

Experiments are demonstrated on printed circuit board, LTCC, and monolithic GaAs substrate.

实验结果于印刷电路板 、 低温共烧陶瓷 、 与单晶砷化镓基板上实现。

In this paper, a small Hall current sensor made from a GaAs Hall component is introduced.

介绍了一种利用砷化镓霍尔元件设计的微型霍尔电流传感器。

To obtain high quality semi - insulating GaAs wafers, it is necessary to decrease microscopic defect density.

为了获得高质量半绝缘砷化镓单晶片， 有必要降低微缺陷密度。

Gallium arsenide cells of laboratory efficiency up to 21 %, 18 % up to mass production.

砷化镓电池的实验室效率可达21%， 批量生产可达18%。

This was really exciting because the low - loss region is right at the gallium - arsenide laser emission band.

这实在令人振奋，因为低损耗窗口正处于砷化镓激光器的发光波段。