退火温度

The suitable recovery strain annealing temperature was 500 ℃.

适宜的回复应变退火温度为500℃。

While annealed in the atmosphere, nano - crystalline LaF _ 3 was oxidized over 500 � � C.

在大气中退火温度超过500℃时， 纳米LaF_3块体会被氧化。

Temperatures of anneal: At 30℃, the stripes of amplification were most distinctive.

退火温度： 在30℃时扩增条带最清晰。

Results The 302 bp desired product was obtained at each anneal temperature.

结果各退火温度条件下，β-actin扩增产物 均形成长度为302bp片段，且未见非特异性扩增产物条带。

There is a mediumphase during the gradual formation of CeSi _ 2 from 150 to 400℃.

随着退火温度从150℃上升，CeSi_2逐步形成，并在300—400℃之间完全反应。