vbe

VBE varies between 0 . 3 and 0 . 7 , depending onthe base current.

VBE的 值处于 0307 之间, 这取决于基极电流.

The excessive expression of MMP plays important role in the destroy of BBB and VBE.

MMP的过度表达在BBB破坏引起VBE及 继发性脑损伤过程中发挥着关键作用.

The VBE can be caused by the damage of blood brain barrier ( BBB ).

VBE的发生是血脑屏障 ( bloodbrain barrier,BBB ) 通透性增加的结果.

as such, a circuit designed with L-mosfet usually can work fine without a Vbe (or Vgs) multiplier for thermal compensation.

同样地，用L-mosfets设计的线路不用Vbe（或Vgs）倍增器作温度补偿可以工作得非常好。

Especially, 3d digital application of architectural heritage, has become research focus and academic front in VBE.

值得特别提出的是，建筑文化遗产的三维数字化应用，已经成为虚拟建筑环境的研究热点和学术前沿。